Mono Wafer 156 *156mm Item Specification
Item
|
Specification
|
Unit
|
Remarks
|
Crystal Growth Method |
CZ
|
--
|
|
Crystal Orientation |
<100> ± 3
|
degree
|
|
Conductivity Type |
P
|
--
|
|
Dopant |
Boron
|
--
|
|
Resistivity |
0.5 ~ 3
|
Ω - cm
|
|
EPD |
< 2000
|
ea/cm2
|
|
Life Time |
> 10
|
µS
|
@Ingot Level |
Oxygen Contents |
~ 1 x E18 at/cm3
|
|
ASTM F121-83 |
Carbon Contents |
~ 1 x E18 at/cm3
|
|
|
Diameter |
200 ± 0.5
|
mm
|
|
Square length |
156 ± 0.5
|
mm
|
|
Chord length |
125.2 ± 1.5
|
mm
|
|
Thickness |
200 ± 20
|
µm
|
|
TTV |
<= 40
|
µm
|
|
Warp |
<= 100
|
µm
|
De-Stressed |
Edge Chips |
<= 3
|
mm
|
|
Front Surface |
As wire-saw
|
--
|
|
Back Surface |
As wire-saw
|
--
|
|
Appearance |
Free of cracks, craw feet and foreign materials; Saw mark depth <20 um |
||
Packing | Shrink wrap ; per 100 wafers | ||
Note | Mono-crystalline; Angle between square sides : 90 deg. +/-18' |
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