Multi Wafer 156*156mm Item Specification
Item
|
Specification
|
Unit
|
Remarks
|
Crystal Growth Method |
C
|
--
|
|
Conductivity Type |
P
|
--
|
|
Dopant |
Boron
|
--
|
|
Resistivity |
0.5 ~ 3.0
|
Ω - cm
|
|
Oxygen Contents |
< 8 x E17 at/cm3
|
|
ASTM F121-83 |
Carbon Contents |
< 1 x E18 at/cm3
|
|
|
Lifetime |
≧ 2.0
|
us
|
Brick Level |
Square length |
156 ± 0.5
|
mm
|
|
Thickness |
200 ± 20
|
µm
|
Center Point |
TTV |
≦ 40
|
µm
|
|
Bevel Width |
0.5~2.0
|
mm
|
|
Warp |
≦ 100
|
μm
|
|
Edge Chips |
≦ 0.5
|
mm
|
De-stressed |
Front Surface |
As wire-saw
|
--
|
Length <1.5 mm ; (Max 1 pcs/w) |
Back Surface |
As wire-saw
|
--
|
|
Appearance |
Free of cracks, craw feet, foreign material ; Saw mark depth < 15 um ; Total micro-grain area /w < 2 cm2 |
||
Packing | Shrink wrap ; per 100 wafers | ||
Note | A+ Grade ; Angle between square sides : 90 deg. +/-18' |
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