4-inch Sapphire Substrates Item Specification
Item
|
Specification
|
Unit
|
Material |
>99.99% Single Crystal Al2O3 |
|
Orientation |
C-axis[0001] tiled M-axis 0.2 ± 0.1°
|
Degree
|
Primary Flat |
A-Axis [11-20] ± 0.2°
|
Degree
|
Diameter |
100 ± 0.25
|
mm
|
Thickness |
650 ± 20
|
μm
|
Flat Length |
31 mm ± 1
|
mm
|
TTV |
≦ 20
|
um
|
Bow |
-20 ~ 0
|
um
|
Warp |
≦50
|
um
|
LTV |
≦15
|
um
|
TIR |
≦15
|
um
|
Frontside Surface Roughness |
≦10
|
Å
|
Backside Surface Roughness |
0.6 ≦ Ra ≦1.2
|
um
|
Wafer Edge |
R-Type
|
|
Laser Mark |
Front side
|
|
Package |
25 wafers in one cassette
|
|
Other specifications are available upon request. |
規格頻率範圍:315MHz線路架構:S/F工作電壓: 4.5V~5V最大電流: 270mA輸出功率: